Gallium-based semiconductors represent a revolutionary class of materials enabling applications impossible with traditional silicon.
III-V Semiconductor Compounds
III-V semiconductors combine Group III elements (gallium) with Group V elements (nitrogen, phosphorus, arsenic).
Gallium Arsenide (GaAs)
- First III-V semiconductor
- Superior electron mobility to silicon
- Direct bandgap enables efficient light emission
- Primary use in RF and microwave applications
- Space solar cells
Gallium Nitride (GaN)
- Wide bandgap semiconductor
- Excellent for high-power applications
- Superior temperature handling
- Critical for power electronics and RF devices
- Growing importance for 5G and EV applications
Gallium Phosphide (GaP)
- Lower cost alternative to GaAs
- Good for optoelectronic applications
- Limited high-frequency performance
- Niche applications
Performance Advantages
| Parameter | GaAs | Si | GaN |
|---|---|---|---|
| Electron Mobility | 8,500 cm²/Vs | 1,350 | 1,200-2,000 |
| Max Temperature | 250°C | 150°C | 300-400°C |
| Power Density | Very High | Moderate | Very High |
Integrated Circuit Applications
High-Speed ICs: GaAs enables switching speeds exceeding silicon capabilities
RF/Microwave ICs: Gallium compounds operate at frequencies where silicon cannot
Optoelectronic Integrated Circuits: Light generation and detection integrated on single chip
Market Impact
Gallium semiconductors represent approximately 40-45% of global gallium demand. This segment is growing faster than traditional semiconductor markets.