Gallium arsenide (GaAs) and gallium nitride (GaN) are the two dominant gallium compounds. Each has distinct properties that make them optimal for specific applications.
Material Properties
Electrical Performance
| Property | GaAs | GaN | Advantage |
|---|---|---|---|
| Electron Mobility (300K) | 8,500 cm²/Vs | 1,200 cm²/Vs | GaAs (7x higher) |
| Breakdown Field | 400 kV/cm | 3,000 kV/cm | GaN (7.5x higher) |
| Bandgap | 1.42 eV | 3.44 eV | GaN (much wider) |
| Peak Velocity | 2.5 × 10⁷ cm/s | 2.0 × 10⁷ cm/s | GaAs (slight) |
| Saturation Velocity | 1.0 × 10⁷ cm/s | 2.5 × 10⁷ cm/s | GaN (better) |
Thermal Properties
| Property | GaAs | GaN | Implication |
|---|---|---|---|
| Thermal Conductivity | 46 W/m-K | 130 W/m-K | GaN 2.8x better |
| Temperature Coefficient | Moderate | Excellent | GaN more stable |
| Max Operating Temp | ~200°C | ~300-400°C | GaN higher rating |
Application Specialization
GaAs (Gallium Arsenide) - RF & Optoelectronics Leader
Historical Dominance
- Pioneered high-frequency semiconductors
- RF industry standard for decades
- Integrated RF IC leader
- Optoelectronic device standard
Primary Applications
-
Satellite Communications
- Satellite transponders
- Ground station amplifiers
- Low-noise receivers
- Space-qualified heritage
-
Microwave & RF
- Microwave power amplifiers
- Ka-band systems
- Mm-wave components
- Specialized high-frequency applications
-
Optoelectronics
- Laser diodes (infrared wavelengths)
- Photodiodes and detectors
- LED manufacturing
- Integrated optoelectronic circuits
-
Specialized RF
- Monolithic microwave ICs (MMICs)
- Millimeter-wave circuits
- Space-rated components
- Military radar systems
Market Characteristics
- Smaller, specialized market
- Premium pricing for specialized applications
- Mature technology with high reliability
- Space-qualified variants available
- Limited volume compared to GaN
GaN (Gallium Nitride) - Power Electronics Revolutionary
Recent Emergence & Growth
- Commercialized in 1990s
- Explosive growth in 2010s-2020s
- Enabling new power electronics paradigm
- Transforming multiple industries
Primary Applications
-
Power Conversion
- Power supplies (AC-DC converters)
- DC-DC converters
- Power factor correction (PFC)
- Renewable energy inverters
-
EV & Automotive
- EV charging systems
- On-board chargers
- Traction power electronics
- Motor drive controllers
-
5G Infrastructure
- Base station power management
- RF power amplifiers (mid-band)
- Integrated power solutions
- High-efficiency systems
-
Consumer Electronics
- Fast power chargers
- Laptop adapters
- USB-C power supplies
- Gaming console power
Market Characteristics
- Explosive volume growth (>30% annually)
- Rapidly declining costs
- High-volume consumer adoption
- Rapidly expanding manufacturing capacity
- Becoming commodity in consumer electronics
Direct Comparison Table
| Factor | GaAs | GaN | Winner/Notes |
|---|---|---|---|
| RF Speed | Excellent | Good | GaAs for extreme frequencies |
| Power Density | Moderate | Excellent | GaN for high power |
| Thermal | Moderate | Excellent | GaN handles more power density |
| Cost | High | Declining rapidly | GaN becoming competitive |
| Volume Production | Medium | Very High | GaN mass market adoption |
| Maturity | Very Mature | Maturing | GaAs legacy advantage |
| Temperature Range | Standard | Wide | GaN superior |
| High-Frequency RF | Superior | Good | GaAs for extreme frequencies |
| Power Electronics | Limited | Excellent | GaN dominance |
| Optoelectronics | Excellent | Moderate | GaAs specialization |
Market Dynamics
GaAs Market
- Total Market: ~$8-10 billion annually
- Growth Rate: 3-5% annually
- Primary Drivers: Satellite growth, RF demand
- Key Applications: Space, military, RF
- Price Trend: Stable to slightly declining
- Volume: Millions of units (specialized)
GaN Market
- Total Market: ~$1-2 billion (growing rapidly)
- Growth Rate: 25-30%+ annually
- Primary Drivers: EV, 5G, power conversion
- Key Applications: Consumer, automotive, infrastructure
- Price Trend: Rapidly declining
- Volume: Billions of units (exploding)
Technology Performance Battlegrounds
Microwave Frequencies (>10 GHz)
Winner: GaAs
- Superior electron mobility
- Better for extreme frequencies
- Established process technology
- Specialized but dominant
- Will likely remain GaAs territory
RF Power Amplifiers (0.1-6 GHz)
Winner: Increasingly GaN
- GaN rapidly gaining share
- Cost-competitive now
- Better power density
- Replacing GaAs in new designs
- Growth market for GaN
Power Conversion
Winner: GaN (unanimous)
- GaN dramatically superior
- Enables new efficiency levels
- Cost-effective for volumes
- No viable GaAs alternative
- GaN virtually only option
Optoelectronics
Winner: GaAs (for infrared)
- GaAs laser diodes standard
- GaN emerging for blue/green LEDs
- Complementary technologies
- Coexistence expected
Cost Evolution
Historical Perspective
2000s: GaAs significantly cheaper than GaN 2010s: GaN costs declining, approaching GaAs 2020s: GaN competitive with GaAs on per-unit basis
Unit Cost Trajectory
| Year | GaAs ($/unit) | GaN ($/unit) | Ratio |
|---|---|---|---|
| 2010 | $5-10 | $50-100 | GaAs 10-20x cheaper |
| 2015 | $3-8 | $20-50 | GaAs 5-10x cheaper |
| 2020 | $2-6 | $5-20 | GaAs 2-5x cheaper |
| 2025 | $2-5 | $2-10 | Comparable to GaAs |
| 2030* | $2-5 | $1-5 | GaN potentially cheaper |
*Forecast
Investment Implications
GaAs Investment Thesis
Strengths
- Mature, stable market
- Specialized applications
- Space/military premiums
- Reliable supply chains
- Established customer base
Challenges
- Slower growth
- Mature technology
- Competitive pricing
- Limited new applications
- Commodity risk
GaN Investment Thesis
Strengths
- Explosive growth trajectory
- Multiple emerging applications
- Rapid cost reduction
- Volume ramp opportunity
- Margin expansion in some segments
Challenges
- Rapidly declining prices
- Increasing competition
- Manufacturing scaling challenges
- Technology still maturing
- Market consolidation risk
Future Outlook
GaAs Forecast
- Continued use in satellite/space applications
- Stable RF market with modest growth
- Some applications migrating to GaN
- Niche applications providing stability
- Potential emergence in advanced millimeter-wave systems
GaN Forecast
- Continued explosive growth in power electronics
- Automotive (EV charging, traction) acceleration
- 5G infrastructure expansion
- Consumer electronics mainstream adoption
- Potential emergence in higher-frequency RF (competing with GaAs)
Coexistence Scenario (Most Likely)
Rather than one replacing the other:
- Market Segmentation - Each dominates specific applications
- GaAs - Space, military, extreme RF frequencies, optoelectronics
- GaN - Power electronics, 5G, automotive, consumer electronics
- Evolution - Technology maturation may shift boundaries
- Complementary - Both essential for modern electronics
Key Takeaways
- Different specializations - GaAs for RF/optoelectronics, GaN for power electronics
- Market dynamics differ - GaAs stable, GaN explosive growth
- Complementary technologies - Not direct replacements in most cases
- Cost convergence - GaN rapidly approaching GaAs per-unit cost
- Volume divergence - GaN adoption rapidly accelerating
- Long-term coexistence - Both compounds essential for distinct applications
See Also
- Gallium vs Silicon - Semiconductor material comparison
- GaN vs Silicon - Power semiconductor competition
- GaAs vs Silicon - RF comparison
- Gallium Arsenide - GaAs detailed analysis
- Gallium Nitride - GaN detailed analysis
- Gallium in Power Electronics - Applications overview
- Comparisons Hub - All gallium comparisons